What is claimed is:1. A display device, comprising:a substrate including a display area and a non-display area adjacent to the display area;lower pads disposed in the non-display area of the substrate and spaced apart from each other;upper pads disposed on the lower pads and spaced apart from each other;an anisotropic conductive film disposed between the lower pads and the upper pads; anda circuit film disposed on the upper pads, the circuit film including:first lower holes disposed between the upper pads in a plan view;first upper holes connected to the first lower holes and having radiuses larger than radiuses of the first lower holes; andvernier-keys disposed at edges of the first upper holes on the circuit film,wherein the first upper holes form first openings on an upper surface of the circuit film, andwherein the vernier-keys are configured to include a scale to analyze compressive forces imposed on the anisotropic conductive film.2. The display device of claim 1, wherein the anisotropic conductive film fills the first lower holes and the first upper holes.3. The display device of claim 1, wherein the circuit film further includes:second lower holes spaced apart from the first lower holes and disposed between the upper pads in a plan view; andsecond upper holes connected to the second lower holes and having radiuses larger than radiuses of the second lower holes, wherein the second upper holes form second openings on the upper surface of the circuit film.4. The display device of claim 3, wherein the anisotropic conductive film fills the first lower holes, the second lower holes, the first upper holes, and the second upper holes.5. The display device of claim 3, wherein the vernier-keys are disposed at edges of the first upper holes and edges of the second upper holes on the circuit film.6. The display device of claim 1, wherein the upper pads overlap the lower pads.7. A method of manufacturing a display device, comprising:preparing a substrate including a display area and a non-display area adjacent to the display area;forming lower pads spaced apart from each other in the non-display area of the substrate;disposing an anisotropic conductive film on the lower pads;disposing a circuit film including:forming upper pads on the anisotropic conductive film, the upper pads spaced apart from each other;forming first lower holes between the upper pads in a plan view;forming first upper holes connected to the first lower holes and having radiuses larger than radiuses of the first lower holes; andforming vernier-keys disposed at edges of the first upper holes on the circuit film; andcompressing the circuit film to the substrate to bond the substrate, the lower pads, the upper pads, the circuit film, and the anisotropic conductive film, whereinthe first upper holes form first openings on an upper surface of the circuit film, andthe vernier-keys are configured to include a scale to analyze compressive forces imposed on the anisotropic film.8. The method of claim 7, wherein the forming of the circuit film includes:forming second lower holes between the upper pads in a plan view, the second lower holes spaced apart from the first lower holes; andforming second upper holes connected to the second lower holes and having radiuses larger than radiuses of the second lower holes,wherein the second upper holes form second openings on the upper surface of the circuit film.9. The method of claim 8, further comprising:forming the vernier-keys at edges of the second upper holes on the circuit film.10. The method of claim 8, further comprising:analyzing a compressive force of the anisotropic conductive film exposed through at least one of the first openings and the second openings.11. The method of claim 8, further comprising:analyzing a curing rate of the anisotropic conductive film exposed through at least one of the first openings and the second openings.12. The method of claim 8, wherein the forming of the first lower holes, the first upper holes, the second lower holes, and the second upper holes includes performing a dry etching method.13. The method of claim 8, wherein the forming of the first lower holes, the first upper holes, the second lower holes, and the second upper holes includes performing a wet etching method.14. The method of claim 8, wherein the forming of the first lower holes, the first upper holes, the second lower holes, and the second upper holes includes performing a punching method.