Referring to FIGS. 7, 8 and 11D, the circuit film 140 may be disposed on the anisotropic conductive film 120. The upper pads 130 may be formed on the lower surface of the circuit film 140. The upper pads 130 may be formed by partially etching an upper pad layer after the upper pad layer is entirely formed on the circuit film 140. In an embodiment, the upper pads 130 may be formed by dry etching the upper pad layer. In another embodiment, the upper pads 130 may be formed by wet etching the upper pad layer. The first lower holes 145a may be formed between the upper pads 130 in a plan view. The first upper holes 145b may be formed on the first lower holes 145a. The first lower holes 145a and the first upper holes 145b may be connected. The radiuses of the first upper holes 145b may be larger than the radiuses of the first lower holes 145a. In an embodiment, the first upper holes 145b and the first lower holes 145a may be sequentially formed. For example, the first upper holes 145b may be formed, and the first lower holes 145a may be formed after the first upper holes 145b are formed.