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Electronic device

專利號(hào)
US11617265B1
公開日期
2023-03-28
申請(qǐng)人
RENESAS ELECTRONICS CORPORATION(JP Tokyo)
發(fā)明人
Kazuaki Tsuchiyama; Tatsuaki Tsukuda
IPC分類
H05K1/11; H05K1/14; H01L23/538; H01L25/065
技術(shù)領(lǐng)域
fpc1,terminal,wiring,44s1,signal,pcb1,substrate,in,terminals,44g1
地域: Tokyo

摘要

A width of each of a first signal terminal and a reference potential terminal formed in a first connection region of a core insulating layer constituting a flexible substrate is larger than a width of each of a first backside signal terminal and a backside reference potential terminal formed in a second connection region of the core insulating layer. In addition, a first separation distance between the first signal terminal and the reference potential terminal arranged adjacent to the first signal terminal is smaller than a second separation distance between the first backside signal terminal and the backside reference potential terminal arranged adjacent to the first backside signal terminal. An insulating film formed on a first surface of the core insulating layer at a position overlapping each of the first connection region and the second connection region covers the first connection region such that the second connection region is exposed.

說明書

Other problems and novel features will be apparent from the description in the present specification and accompanying drawings.

權(quán)利要求

1
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