During a reading operation, a positive bias of approximately 2.5V may be applied to the first capacitor 168 and approximately 1V may be applied to the drain 108 of a selected nonvolatile memory transistor 188. The source 106 and the substrate terminal of the selected nonvolatile memory transistor 188 may be grounded. A current may be detected at the drain 108 depending on a threshold voltage of the selected nonvolatile memory transistor 188. For example, the threshold voltage of the selected nonvolatile memory transistor 188 is low after erase and a current may be detected at the drain 108. A program operation may lead to a high threshold voltage of the selected nonvolatile memory transistor 188 and less current or negligible current may be detected at the drain 108. The first capacitor 168, the source 106, the drain 108 and the substrate terminal of an unselected nonvolatile memory transistor 188 are grounded.