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Ferroelectric device film stacks with texturing layer, and method of forming such

專利號
US11659714B1
公開日期
2023-05-23
申請人
Kepler Computing Inc.(US CA San Francisco)
發(fā)明人
Niloy Mukherjee; Ramamoorthy Ramesh; Sasikanth Manipatruni; James Clarkson; FNU Atiquzzaman; Gabriel Antonio Paulius Velarde; Jason Y. Wu
IPC分類
H01L27/11507; H01L27/11502; H01L49/02; H01L27/11597; H01L27/11592; H01L27/11587
技術(shù)領(lǐng)域
templating,lattice,layer,or,angstroms,in,structure,constant,fe,some
地域: CA CA San Francisco

摘要

Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.

說明書

The terms “substantially,” “close,” “approximately,” “near,” and “about,” generally refer to being within +/?10% of a target value. For example, unless otherwise specified in the explicit context of their use, the terms “substantially equal,” “about equal” and “approximately equal” mean that there is no more than incidental variation between among things so described. In the art, such variation is typically no more than +/?10% of a predetermined target value.

Unless otherwise specified the use of the ordinal adjectives “first,” “second,” and “third,” etc., to describe a common object, merely indicate that different instances of like objects are being referred to, and are not intended to imply that the objects so described must be in a given sequence, either temporally, spatially, in ranking or in any other manner.

For the purposes of the present disclosure, phrases “A and/or B” and “A or B” mean (A), (B), or (A and B). For the purposes of the present disclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B and C).

權(quán)利要求

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