In some embodiments, the ferroelectric material of ferroelectric layer 320 includes one or more of: Pb, La, Zr, Ti, Bi, Fe, Mg, N, Hf, or Zr. In some embodiments, the ferroelectric material of ferroelectric layer 320 includes one of: Pb_xLa_1-xZr or TiO₃; pseudo-cubic BiFeO₃ with lattice constant of about 3.97 Angstroms; pseudo-cubic La_xBi_1-xFeO₃ with lattice constant of about 3.96 Angstroms; tetragonal BaTiO₃ with lattice constant of about 4 Angstroms; Relaxor Ferroelectrics including lead magnesium niobite-lead titanate (PMN-PT); or Ferroelectric Hf_0.5Zr_0.5O₂ (HZO).

In various embodiments, the thicknesses of each layer (e.g., t₃₁₁, t₃₁₂, t₃₁₃, t₂₃₀) is in a range of 5 nm to 30 nm. In various embodiments, the total height H_CFe of ferroelectric device 300 is in a range of 30 nm to 180 nm. In some embodiments, the lateral thickness L_CFe of ferroelectric device 300 is in a range of 5 nm to 200 nm. In some embodiments, the thicknesses of each layer can be in a range of approximately 1 nm to 100 nm. The total height H_CFe of ferroelectric device 300 would thus be in a range of about 6 nm to 600 nm. In some embodiments, ferroelectric device 300 is formed on top of substrate 314. Substrate 314 can be any suitable substrate such as Si substrate, SiO₂ substrate, metal substrate (e.g., W, Ag, Au, Co, Cu, Fe, Al, or a combination of them). In some embodiments, substrate 314 can have both oxide and metals exposed simultaneously, for example in the backend section of an integrated device flow, such that the ferroelectric layer is deposited on such a composite substrate.