Ferroelectric device film stacks with texturing layer, and method of forming such
摘要
說明書
Example 15: A method of forming a ferroelectric device comprising: fabricating a first layer comprising ferroelectric material; fabricating a second layer over the first layer, the second layer comprising a metallic electrode; fabricating a third layer under the first layer, the third layer comprising a metallic electrode; and fabricating a fourth layer adjacent to the third layer, wherein the fourth layer induces crystallographic orientation in the first layer.
Example 16: The method of example 15, wherein the fourth layer is self-crystalized, and wherein the fourth layer has an in-plane lattice constant.
Example 17: The method of example 16, wherein the in-plane lattice constant is within about 5% of a lattice constant of the third layer and the first layer.
Example 18: The method of example 15, comprising: fabricating a fifth layer adjacent to the fourth layer, wherein the fifth layer comprises a barrier material that prevents oxygen and hydrogen diffusion; and fabricating a sixth layer adjacent to the second layer, wherein the sixth layer comprises a barrier material that prevents oxygen and hydrogen diffusion.
