Ferroelectric device film stacks with texturing layer, and method of forming such
摘要
說明書
Example 3a: The ferroelectric device of example 1a, wherein the third structure is crystalline and has an in-plane lattice constant.
Example 4a: The ferroelectric device of example 3a, wherein the in-plane lattice constant is within about 5% of a lattice constant of the first structure.
Example 5a: The ferroelectric device of example 1a, comprising: fourth structure adjacent to the third structure, wherein the fourth structure comprises a barrier material that prevents oxygen and hydrogen diffusion; and fifth structure adjacent to the second structure, wherein the fifth structure comprises a barrier material that prevents oxygen and hydrogen diffusion.
Example 6a: The ferroelectric device of example 5a, wherein the barrier material of the fourth structure or the fifth structure includes one of: a metal boride; a metal carbide; a metal nitride; an intermetallic; or an amorphous metal oxide.
Example 7a: The ferroelectric device of example 5a comprising a substrate adjacent to the fourth structure, wherein the substrate is one of: Si substrate, SiO2 substrate, metal substrate or a combination of them.
Example 8a: The ferroelectric device of example 1a, wherein: the ferroelectric material includes one or more of: Pb, La, Zr, Ti, Bi, Fe, Mg, N, Hf, or Zr; and the second structure or the third structure includes one or more of: Sr, Ru, O, La, Mn, or Ti.
