Ferroelectric device film stacks with texturing layer, and method of forming such
摘要
說明書
Example 16b: The method device of example 14b, comprising: fabricating fourth structure adjacent to the second structure, wherein the fourth structure comprises a barrier material that prevents oxygen and hydrogen diffusion, wherein the barrier material of the fourth structure includes one of: metal boride; metal carbide; metal nitride; intermetallic; or amorphous metal oxide.
Example 17b: The method of example 14b, wherein the ferroelectric material includes one of: PbxLa1-xZr or TiO3; pseudo-cubic BiFeO3 with a lattice constant of about 3.97 Angstroms; pseudo-cubic LaxBi1-xFeO3 with a lattice constant of about 3.96 Angstroms; tetragonal BaTiO3 with a lattice constant of about 4 Angstroms; Relaxor ferroelectrics including lead magnesium niobite-lead titanate (PMN-PT); or Ferroelectric Hf0.5Zr0.5O2 (HZO); wherein the second structure or the third structure includes one of: orthorhombic SrRuO3 with a lattice constant of about 3.93 Angstroms; SrRuO4; La0.5Sr0.5CoO3; or La0.7Mn0.3CoO3.
Example 18b: The method of example 14b, wherein the third structure includes an intermetallic material, and wherein the intermetallic material includes one of: Ni3Al, NiAl3, Ti3Al, or TiAl3.
