A thin film can be deposited on the surface of a metal material or a non-metal material through the vapor deposition process, the thin film may have a rough surface or a loose structure on the surface and inside the thin film. More specifically, a specific means is to introduce an inert gas with certain pressure, such as argon or nitrogen, into a cavity during the vapor deposition process. The thin film deposited in an environment of high partial gas pressure is no longer dense, but contains a loose structure with through holes inside. The thin film with the loose structure may be a structure of a dense layer covered by a loose layer by introducing the inert gas after a dense film is deposited and then depositing a thin film of the same material. Alternatively, the inert gas is introduced during the deposition of the entire thin film to form the loose structure with through holes. Surface roughness of the uneven surface structure and a diameter of each through hole of the porous structure may be changed by adjusting the pressure of the inert gas introduced into the cavity, for example, the partial pressure of argon ranges from 0.01 Torr to 10 Torr. The vapor deposition process may be, for example, a thermal evaporation or plasma sputtering method. The thermal evaporation method can better generate the porous structure with a loose structure.

In one embodiment, FIG. 7 shows a view illustrating procedures of a manufacturing process of an uneven surface structure or a porous structure according to embodiments of the present disclosure. Step S13 includes steps in process sequence as described below.

In S131, a pixel definition layer is formed.

In S132, the uneven surface structure or the porous structure is disposed on the pixel definition layer.