In S133, a plurality of opening structures is formed on the pixel definition layer, and the opening structure exposes at least part of the first electrode.

In the embodiments of the present disclosure, the pixel definition layer 12 is formed on the pixelated first electrodes 111, the uneven surface structure or the porous structure is formed on the pixel definition layer (FIG. 7 exemplarily shows that the surface of the pixel definition layer 12 facing away from the substrate is processed to form the uneven surface structure 171), a portion of the pixel definition layer without the opening structure 121 is covered by a photoresist 18, the pixel definition layer at positions of the opening structures 121 is etched to expose part of the first electrode 111, and the residual photoresist is finally removed.

In one embodiment, step S132 may include steps described below.

In S1321, a mask is formed.

In S1322, the mask is etched by using a dry etching process to form a porous mask layer.

In S1323, the pixel definition layer is etched through the porous mask layer by using a wet etching process or the dry etching process to form the uneven surface structure underneath the pixel definition layer.