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Thermal structures for heat transfer devices and spatial power-combining devices

專利號
US11665867B2
公開日期
2023-05-30
申請人
Qorvo US, Inc.（US NC Greensboro）
發(fā)明人
Dylan Murdock
IPC分類
H05K7/20; B33Y80/00; H05K7/14
技術(shù)領(lǐng)域
amplifier,sink,heat,body,structure,waveguide,conductor,in,antenna,sinks
地域： NC NC Greensboro

摘要

Thermal structures and, more particularly, improved thermal structures for heat transfer devices and spatial power-combining devices are disclosed. A spatial power-combining device may include a plurality of amplifier assemblies and each amplifier assembly includes a body structure that supports an input antenna structure, an amplifier, and an output antenna structure. One or more heat sinks may be partially or completely embedded within a body structure of such amplifier assemblies to provide effective heat dissipation paths away from amplifiers. Heat sinks may include single-phase or two-phase materials and may include pre-fabricated complex thermal structures. Embedded heat sinks may be provided by progressively forming unitary body structures around heat sinks by additive manufacturing techniques.

說明書

RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 16/821,531, filed Mar. 17, 2020, the disclosure of which is hereby incorporated herein by reference in its entirety.

FIELD OF THE DISCLOSURE

The disclosure relates generally to thermal structures and, more particularly, to improved thermal structures for heat transfer devices and spatial power-combining devices.

BACKGROUND

Spatial power-combining devices are used for broadband radio frequency power amplification in commercial and defense communications, radar, electronic warfare, satellite, and various other communication systems. Spatial power-combining techniques are implemented by combining broadband signals from a number of amplifiers to provide output powers with high efficiencies and operating frequencies. One example of a spatial power-combining device utilizes a plurality of solid-state amplifier assemblies that form a coaxial waveguide to amplify an electromagnetic signal. Each amplifier assembly may include an input antenna structure, an amplifier, and an output antenna structure. When the amplifier assemblies are combined to form the coaxial waveguide, the input antenna structures may form an input antipodal antenna array, and the output antenna structures may form an output antipodal antenna array.

權(quán)利要求

1
What is claimed is:1. A solid state power amplifier (SSPA) device comprising: one or more amplifiers; and a planar thermal structure on which the one or more amplifiers are mounted, the planar thermal structure comprising one or more embedded heatsinks that are registered with the one or more amplifiers, the one or more embedded heatsinks comprising a solid material that is surrounded by the planar thermal structure.2. The SSPA device of claim 1, wherein the SSPA device is a planar power amplifier device.3. The SSPA device of claim 1, further comprising an additional layer between the one or more amplifiers and the planar thermal structure.4. The SSPA device of claim 3, wherein the additional layer comprises a printed circuit board.5. The SSPA device of claim 3, wherein the additional layer comprises an additional heat sink that is on the planar thermal structure.6. The SSPA device of claim 1, wherein the one or more amplifiers comprise one or more monolithic microwave integrated circuit (MMIC) amplifiers.7. The SSPA device of claim 6, wherein the one or more MMICs comprise gallium nitride (GaN)-based MMICs.8. The SSPA device of claim 1, wherein:the one or more amplifiers comprises a plurality of amplifiers;the one or more embedded heatsinks comprise a plurality of embedded heatsinks; anda separate embedded heatsink of the plurality of embedded heatsinks is registered with each amplifier of the plurality of amplifiers.9. The SSPA device of claim 1, wherein the planar thermal structure is formed by additive manufacturing around the one or more embedded heatsinks.10. The SSPA device of claim 1, wherein the one or more embedded heatsinks are movable within the planar thermal structure.11. A solid state power amplifier (SSPA) device comprising:one or more amplifiers; anda thermal structure on which the one or more amplifiers are mounted, the thermal structure comprising one or more embedded heatsinks that are registered with the one or more amplifiers, the one or more embedded heatsinks comprising a solid material that is movable within the thermal structure.12. The SSPA device of claim 11, wherein:the one or more amplifiers comprise a plurality of amplifiers;the one or more embedded heatsinks comprise a plurality of embedded heatsinks; anda separate embedded heatsink of the plurality of embedded heatsinks is registered with each amplifier of the plurality of amplifiers.13. The SSPA of claim 11, wherein the SSPA device is a planar power amplifier device.14. The SSPA of claim 11, wherein the one or more embedded heatsinks are movable within a cavity formed within the thermal structure.15. The SSPA of claim 14, wherein the one or more embedded heatsinks comprise a threaded insert that is movable within the cavity.16. The SSPA of claim 15, wherein the threaded insert is accessible through an opening formed in the thermal structure.17. The SSPA device of claim 11, further comprising an additional layer between the one or more amplifiers and the thermal structure.18. The SSPA device of claim 17, wherein the additional layer comprises a printed circuit board.19. The SSPA device of claim 17, wherein the additional layer comprises an additional heat sink that is on the thermal structure.20. The SSPA device of claim 11, wherein the one or more amplifiers comprise gallium nitride (GaN)-based monolithic microwave integrated circuit (MMIC) amplifiers.
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