Micro light-emitting diode displays with improved power efficiency
地域：
CA
CA Santa Clara
摘要
Micro light-emitting diode displays and methods of fabricating micro LED displays are described. In an example, a micro light emitting diode pixel structure includes a plurality of micro light emitting diode devices in a dielectric layer. Each of the micro light emitting diode devices have Mie scattering particles thereon. A transparent conducting oxide layer is above the dielectric layer and on the Mie scattering particles. A binder material layer is above the transparent conducting oxide layer. The binder material layer has a plurality of Rayleigh scattering particles therein.
說(shuō)明書(shū)
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Embodiments of the disclosure are in the field of micro-LED devices and, in particular, micro light-emitting diode displays with improved power efficiency.
Displays having micro-scale light-emitting diodes (LEDs) are known as micro-LED, mLED, and μLED. As the name implies, micro-LED displays have arrays of micro-LEDs forming the individual pixel elements.
A pixel may be a minute area of illumination on a display screen, one of many from which an image is composed. In other words, pixels may be small discrete elements that together constitute an image as on a display. These primarily square or rectangular-shaped units may be the smallest item of information in an image. Pixels are normally arranged in a two-dimensional (2D) matrix, and are represented using dots, squares, rectangles, or other shapes. Pixels may be the basic building blocks of a display or digital image and with geometric coordinates.
權(quán)利要求
What is claimed is:1. A micro light emitting diode pixel structure, comprising:a plurality of micro light emitting diode devices in a dielectric layer, each of the micro light emitting diode devices having Mie scattering particles directly thereon; a transparent conducting oxide layer above the dielectric layer and on the Mie scattering particles; and a binder material layer above the transparent conducting oxide layer, the binder material layer having a plurality of Rayleigh scattering particles therein. 2. The micro light emitting diode pixel structure of claim 1 , wherein the Mie scattering particles are titanium dioxide (TiO2) particles. 3. The micro light emitting diode pixel structure of claim 1 , wherein the Mie scattering particles each have a diameter in the range of 0.2-0.5 of the wavelength of light of one or more of the plurality of micro light emitting diode devices. 4. The micro light emitting diode pixel structure of claim 1 , wherein the Rayleigh scattering particles are titanium dioxide (TiO2) particles, silicon dioxide (SiO2) particles, or zirconium oxide (ZrO2) particles. 5. The micro light emitting diode pixel structure of claim 1 , wherein the Rayleigh scattering particles have a diameter in the range of 4 nanometers-15 nanometers. 6. The micro light emitting diode pixel structure of claim 1 , wherein the binder material layer is transparent to visible light and has a refractive index between 1.2 and 1.5. 7. The micro light emitting diode pixel structure of claim 1 , wherein the binder material layer is selected from the group consisting of an epoxy layer, a polycarbonate layer, and a polyolefin layer. 8. The micro light emitting diode pixel structure of claim 1 , wherein the plurality of micro light emitting diode devices comprises a blue micro light emitting diode device, a green micro light emitting diode device, and a red micro light emitting diode device. 9. The micro light emitting diode pixel structure of claim 1 , wherein the plurality of micro light emitting diode devices is a plurality of GaN nanowire-based or nanopyramid-based micro light emitting diode devices. 10. The micro light emitting diode pixel structure of claim 1 , wherein the plurality of micro light emitting diode devices, the transparent conducting oxide layer, and the binder material layer form a front plane of the micro light emitting diode pixel structure, and wherein the micro light emitting diode pixel structure further comprises a backplane beneath the front plane, the backplane comprising:a glass substrate having an insulating layer thereon; and a plurality of pixel thin film transistor circuits in and on the insulating layer, each of the pixel thin film transistor circuits comprising a gate electrode and a channel comprising polycrystalline silicon or indium gallium zinc oxide (IGZO). 11. The micro light emitting diode pixel structure of claim 10 , wherein each of the pixel thin film transistor circuits is to drive at least one of the plurality of micro light emitting diode devices. 12. The micro light emitting diode pixel structure of claim 10 , wherein each of the pixel thin film transistor circuits comprises a current mirror and a linearized transconductance amplifier coupled to the current mirror. 13. A micro light emitting diode pixel structure, comprising:a substrate having a plurality of conductive interconnect structures in a first dielectric layer thereon; a plurality of micro light emitting diode devices in a second dielectric layer above the first dielectric layer, each of the micro light emitting diode devices having Mie scattering particles directly thereon, individual ones of the plurality of micro light emitting diode devices electrically coupled to a corresponding one of the plurality of conductive interconnect structures, wherein the second dielectric layer is separate and distinct from the first dielectric layer; a transparent conducting oxide layer on the plurality of micro light emitting diode devices and on the second dielectric layer; and a binder material layer above the transparent conducting oxide layer, the binder material layer having a plurality of Rayleigh scattering particles therein. 14. The micro light emitting diode pixel structure of claim 13 , wherein the substrate is a silicon substrate comprising metal oxide semiconductor (CMOS) devices or thin film transistor (TFT) devices coupled to the plurality of conductive interconnect structures. 15. The micro light emitting diode pixel structure of claim 13 , wherein the plurality of micro light emitting diode devices comprises a red micro light emitting diode device, a green micro light emitting diode device, and a blue micro light emitting diode device. 16. The micro light emitting diode pixel structure of claim 13 , wherein the Mie scattering particles are titanium dioxide (TiO2) particles. 17. The micro light emitting diode pixel structure of claim 13 , wherein the Rayleigh scattering particles are titanium dioxide (TiO2) particles, silicon dioxide (SiO2) particles, or zirconium oxide (ZrO2) particles. 18. A method of fabricating a micro light emitting diode pixel structure, the method comprising:providing a first wafer having a plurality of conductive interconnect structures in a first dielectric layer thereon; providing a second wafer having a plurality of micro light emitting diode devices in a second dielectric thereon; coupling the first and second wafers to provide individual ones of the plurality of micro light emitting diode devices electrically coupled to a corresponding one of the plurality of conductive interconnect structures; removing the second wafer; forming Mie scattering particles on each of the micro light emitting diode devices; forming a transparent conducting oxide layer on the plurality of micro light emitting diode devices and on the second dielectric layer; and forming a binder material layer above the transparent conducting oxide layer, the binder material layer having a plurality of Rayleigh scattering particles therein. 19. The method of claim 18 , wherein the first wafer is a silicon substrate comprising metal oxide semiconductor (CMOS) devices or thin film transistor (TFT) devices coupled to the plurality of conductive interconnect structures. 20. The method of claim 18 , wherein the plurality of micro light emitting diode devices comprises a red micro light emitting diode device, a green micro light emitting diode device, and a blue micro light emitting diode device. 21. A micro light emitting diode pixel structure, comprising:a plurality of micro light emitting diode devices in a dielectric layer; a transparent conducting oxide layer above the dielectric layer and over the plurality of micro light emitting diode devices; and a plurality of dielectric nanoparticles, a first portion of the plurality of dielectric nanoparticles on or in the transparent conducting oxide layer and over the plurality of micro light emitting diode devices, and a second portion of the plurality of nanoparticles directly on one or more of the plurality of micro light emitting diode devices. 22. The micro light emitting diode pixel structure of claim 21 , wherein the dielectric nanoparticles are titanium dioxide (TiO2) particles, silicon dioxide (SiO2) particles, zirconium oxide (ZrO2) particles, or a combination thereof. 23. The micro light emitting diode pixel structure of claim 21 , wherein the dielectric nanoparticles each have a diameter in the range of 10 nanometers-300 nanometers. 24. The micro light emitting diode pixel structure of claim 21 , wherein the plurality of micro light emitting diode devices comprises a blue micro light emitting diode device, a green micro light emitting diode device, and a red micro light emitting diode device. 25. The micro light emitting diode pixel structure of claim 21 , wherein the plurality of micro light emitting diode devices is a plurality of GaN nanowire-based or nanopyramid-based micro light emitting diode devices.
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