Referring again to FIG. 2, the pixel structure 200 includes a front plane 208 on the backplane 201. The front plane 208 includes LEDs in a dielectric layer 210, such as a carbon-doped oxide layer. In the example shown, three micro LEDs 212 are included. Each micro LED includes a corresponding micro light emitting diode device 214, 216 or 218 on a conductive interconnect structure 220, such as a conductive bump. In a particular embodiment, micro light emitting diode devices 214, 216 and 218 are blue, green and red micro light emitting diode devices, respectively. It is to be appreciated that other arrangements may be used, including variation in number and/or colors of micro LED devices included. The front plane 208 also includes a transparent conducting oxide layer 224, such as a layer of indium tin oxide (ITO), as a cathode of the pixel structure 200. In an embodiment, each of the micro light emitting diode devices have Mie scattering particles 250 thereon. In an embodiment, a binder material layer 252 is above the transparent conducting oxide layer 224. The binder material layer 252 has a plurality of Rayleigh scattering particles 254 therein.

In an embodiment, each of the pixel TFT circuits 206 is a circuit such as circuit 1200, described below. Embodiments described herein may be based only on the back plane 201 described above. Embodiments described herein may be based only on the front plane 208 described above.