In a second aspect of the present disclosure, three-dimensional micro LEDs with high extraction efficiency for micro LED displays are described.

To provide context, red green blue (RGB) gallium nitride (GaN) LED displays promise low power consumption, improved reliability, and improved color gamut compared to organic LED displays (OLEDs). Nanowire LEDs are currently not efficient enough due to low light extraction efficiency. Addressing such issues, in accordance with one or more embodiments of the present disclosure, nanowire device structures with about 2 times higher light extraction efficiency (relative to conventional nanowire structures) are described. It is to be appreciated that other attempts to address such issues have included the fabrication of OLED displays, or GaN-based nanowire LEDs with low light extraction efficiency. However, the display power consumption is typically higher than desired.

More particularly, in an embodiment, a nanowire or nanopyramid LED structure is disclosed herein where the nanowire sidewalls or nanopyramid cap are “decorated” conformally with high refractive index dielectric (e.g., TiO₂) nanoparticles with subwavelength size. The subwavelength texture can result in higher light extraction efficiency. Advantages of implementing embodiments described herein may include enabling the fabrication of a lower power consumption display with excellent color gamut and display lifetime. A significant component of the LED ecosystem is the thin film transistor (TFT) backplane based display. Embodiments described herein are directed to the TFT backplane based display component.

As an example, FIG. 7A illustrates a cross-sectional view of a nanowire LED having nanoparticles thereon, in accordance with an embodiment of the present disclosure.