Micro light-emitting diode displays with improved power efficiency
摘要
說明書
Example embodiment 35: The micro light emitting diode pixel structure of example embodiment 34, wherein each of the pixel thin film transistor circuits is to drive at least one of the plurality of micro light emitting diode devices.
Example embodiment 36: The micro light emitting diode pixel structure of example embodiment 34 or 35, wherein each of the pixel thin film transistor circuits includes a current mirror and a linearized transconductance amplifier coupled to the current mirror.
Example embodiment 37: A micro light emitting diode pixel structure includes a plurality of micro light emitting diode devices in a dielectric layer. A plurality of dielectric nanoparticles is along sidewalls of each of the plurality of micro light emitting diode devices within the dielectric layer. A transparent conducting oxide layer is above the dielectric layer and over the plurality of micro light emitting diode devices.
Example embodiment 38: The micro light emitting diode pixel structure of example embodiment 37, wherein the dielectric nanoparticles are titanium dioxide (TiO2) particles, silicon dioxide (SiO2) particles, zirconium oxide (ZrO2) particles, or a combination thereof.
Example embodiment 39: The micro light emitting diode pixel structure of example embodiment 37 or 38, wherein the dielectric nanoparticles each have a diameter in the range of 10 nanometers-300 nanometers.
Example embodiment 40: The micro light emitting diode pixel structure of example embodiment 37, 38 or 39, wherein the plurality of micro light emitting diode devices includes a blue micro light emitting diode device, a green micro light emitting diode device, and a red micro light emitting diode device.
