Micro light-emitting diode displays with improved power efficiency
摘要
說明書
Example embodiment 41: The micro light emitting diode pixel structure of example embodiment 37, 38, 39 or 40, wherein the plurality of micro light emitting diode devices is a plurality of GaN nanowire-based or nanopyramid-based micro light emitting diode devices.
Example embodiment 42: The micro light emitting diode pixel structure of example embodiment 37, 38, 39, 40 or 41, wherein the plurality of micro light emitting diode devices and the transparent conducting oxide layer form a front plane of the micro light emitting diode pixel structure, and wherein the micro light emitting diode pixel structure further includes a backplane beneath the front plane. The backplane includes a glass substrate having an insulating layer thereon, and a plurality of pixel thin film transistor circuits in and on the insulating layer. Each of the pixel thin film transistor circuits includes a gate electrode and a channel including polycrystalline silicon or indium gallium zinc oxide (IGZO).
Example embodiment 43: The micro light emitting diode pixel structure of example embodiment 42, wherein each of the pixel thin film transistor circuits is to drive at least one of the plurality of micro light emitting diode devices.
Example embodiment 44: The micro light emitting diode pixel structure of example embodiment 42 or 43, wherein each of the pixel thin film transistor circuits includes a current mirror and a linearized transconductance amplifier coupled to the current mirror.
