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Display panel with bypass line connected to metal layer adjacent to transmission area

專利號(hào)
US11665937B2
公開(kāi)日期
2023-05-30
申請(qǐng)人
Samsung Display Co., Ltd.(KR Yongin-si)
發(fā)明人
Yujin Jeon; Wonse Lee; Sukyoung Kim; Donghyeon Jang
IPC分類
H01L27/32; G06F3/041; H01L51/52
技術(shù)領(lǐng)域
electrode,layer,may,transistor,film,thin,ta,be,driving,area
地域: Yongin-si

摘要

A display panel includes: a first substrate including a transmission area, a display area arranged to at least partially surround the transmission area, and a first non-display area arranged between the transmission area and the display area; display elements arranged in the display area; a first bypass line arranged in the first non-display area and arranged to bypass the transmission area; a second substrate arranged to face the first substrate; a sealing member joining the first substrate to the second substrate and surrounding the periphery of the transmission area; and a metal layer arranged in the first non-display area and arranged more adjacent to the transmission area than the first bypass line, wherein the metal layer is arranged in a different layer than the first bypass line and is electrically connected to the first bypass line.

說(shuō)明書(shū)

Some areas of the semiconductor layer 1130 may correspond to semiconductor layers of the driving thin film transistor T1, the switching thin film transistor T2, the compensation thin film transistor T3, the first initialization thin film transistor T4, the operation control thin film transistor T5, the emission control thin film transistor T6, and the second initialization thin film transistor T7. For example, the semiconductor layers of the driving thin film transistor T1, the switching thin film transistor T2, the compensation thin film transistor T3, the first initialization thin film transistor T4, the operation control thin film transistor T5, the emission control thin film transistor T6, and the second initialization thin film transistor T7 may be connected to each other and may be bent in various suitable shapes.

The semiconductor layer 1130 may include a channel area, and a source area and a drain area on and/or at both sides of the channel area, and the source area and the drain area may be understood as the source electrode and the drain electrode of the corresponding thin film transistor. Hereinafter, for convenience, the source area and the drain area will be respectively referred to as a source electrode and a drain electrode.

權(quán)利要求

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