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Semiconductor device and method for fabricating the same

專利號
US11665978B2
公開日期
2023-05-30
申請人
UNITED MICROELECTRONICS CORP.(TW Hsin-Chu)
發(fā)明人
Jia-Rong Wu; Rai-Min Huang; I-Fan Chang; Ya-Huei Tsai; Yu-Ping Wang
IPC分類
H10N50/80
技術(shù)領(lǐng)域
mtj,imd,metal,layer,patterned,mask,in,could,slots,nitride
地域: Hsin-Chu

摘要

A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first patterned mask on the first IMD layer, in which the first patterned mask includes a first slot extending along a first direction; forming a second patterned mask on the first patterned mask, in which the second patterned mask includes a second slot extending along a second direction and the first slot intersects the second slot to form a third slot; and forming a first metal interconnection in the third slot.

說明書

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Since the metal interconnection 38 is fabricated through the opening intersected by two patterned masks, the exterior profile or shape of the metal interconnection 38 could include a square shown in FIG. 6 or a rectangle shown in FIG. 7. On the other hand, the MTJ 52 is formed by an IBE process, the shape of the MTJ 52 preferably includes a circle shown in FIG. 6 or an ellipse shown in FIG. 7. It should be noted that even though the embodiment shown in FIG. 6 pertains to the combination of a square metal interconnection 38 pairing a circular MTJ 52 while the embodiment shown in FIG. 7 pertains to the combination of a rectangular metal interconnection 38 pairing an elliptical MTJ 52, according to other embodiments of the present invention it would also be desirable to interchange the shapes of the metal interconnection 38 and MTJ 52 for forming different combinations of the elements. For instance, it would be desirable to pair a square metal interconnection 38 with an elliptical MTJ 52 or a rectangular metal interconnection 38 with a circular MTJ 52 depending on the demand of the product, which are all within the scope of the present invention.

權(quán)利要求

1
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