Next, as shown in FIG. 8, in contrast the MTJs 52 in FIGS. 6-7 are all disposed within the boundary of the metal interconnection 38 without overlapping or exceeding the boundary of the metal interconnection 38, it would also be desirable to adjust the size of MTJ 52 or shift the position of the MTJ 52 by overlapping at least an edge such as one side, two sides, three sides, or even four sides of the metal interconnection 38 with the MTJ 52, which are all within the scope of the present invention.

Overall, the present invention first forms an IMD layer on the substrate and then forms a first patterned mask on the IMD layer as the first patterned mask includes a first slot extending along a first direction. Next, a second patterned mask is formed on the first patterned mask, in which the second patterned mask includes a second slot extending along a second direction and the first slot intersects the second slot to form a third slot. Next a metal interconnection is formed in the third slot and a MTJ is formed on the metal interconnection thereafter. By using the aforementioned dual patterned mask to form a MRAM device it would be desirable to fabricate metal interconnection with much smaller pitch as process window and size of the memory device decreases.

Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.