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Semiconductor device and method for fabricating the same

專利號(hào)
US11665978B2
公開日期
2023-05-30
申請(qǐng)人
UNITED MICROELECTRONICS CORP.（TW Hsin-Chu）
發(fā)明人
Jia-Rong Wu; Rai-Min Huang; I-Fan Chang; Ya-Huei Tsai; Yu-Ping Wang
IPC分類
H10N50/80
技術(shù)領(lǐng)域
mtj,imd,metal,layer,patterned,mask,in,could,slots,nitride
地域： Hsin-Chu

摘要

A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first patterned mask on the first IMD layer, in which the first patterned mask includes a first slot extending along a first direction; forming a second patterned mask on the first patterned mask, in which the second patterned mask includes a second slot extending along a second direction and the first slot intersects the second slot to form a third slot; and forming a first metal interconnection in the third slot.

說明書

1 2 3 4 5 6 7 8 9 10 11 12 13 14

These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a method for fabricating a MRAM device according to an embodiment of the present invention.

FIGS. 2-5 illustrate a method for fabricating the MRAM device along the sectional line AA′ in FIG. 1 according to an embodiment of the present invention.

FIG. 6 illustrates a top view of the MTJ overlapping the metal interconnection in FIG. 5 according to an embodiment of the present invention.

FIG. 7 illustrates a top view of the MTJ overlapping the metal interconnection in FIG. 5 according to an embodiment of the present invention.

FIG. 8 illustrates a top view of the MTJ overlapping the metal interconnection in FIG. 5 according to an embodiment of the present invention.

 DETAILED DESCRIPTION

權(quán)利要求

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