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Semiconductor memory device and method for manufacturing the same

專利號
US11744075B2
公開日期
2023-08-29
申請人
Kioxia Corporation(JP Minato-ku)
發(fā)明人
Yoshiaki Fukuzumi; Shinya Arai; Masaki Tsuji; Hideaki Aochi; Hiroyasu Tanaka
IPC分類
H10B43/27; H01L29/66; H01L29/792; H10B43/10; H10B43/50; H01L29/423
技術(shù)領(lǐng)域
film,electrode,gate,in,slits,memory,insulating,pillars,interlayer,films
地域: Minato-ku

摘要

A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

說明書

A mesh-like connecting member 25 (a connecting member) is provided in the back gate electrode film 13. As shown in FIG. 3A, the shape of the mesh-like connecting member 25 is a mesh shape in which a plurality of through-holes 26 are periodically formed in a flat plate. The through-holes 26 are arrayed in zigzag on an XY plane. A part of the back gate electrode film 13 enters the insides of the through-holes 26. In other words, in the back gate electrode film 13, column sections 13a that pierce through the mesh-like connecting member 25 are provided. As shown in FIG. 2, the mesh-like connecting member 25 is divided into an upper layer portion 25a and a lower layer portion 25b. An air gap 25c is formed between the upper layer portion 25a and the lower layer portion 25b. The air gap 25c may be formed over the entire surface or may be partially formed. The mesh-like connecting member 25 may be a continuum. The air gap 25c does not have to be formed.

權(quán)利要求

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