Semiconductor memory device and method for manufacturing the same
摘要
說明書
In the stacked body 67, slits 80 are formed in the X-direction center portions in the blocks. The slits 80 extend along the YZ plane and reach the mesh-like connecting member 25. The source interconnection members 40 are provided on the insides of the slits 80. The p+-type semiconductor portions 55 are formed in regions directly under the slits 80 in the mesh-like connecting member 25. The p+-type semiconductor portions 55 are connected to a driving circuit via the source interconnection members 40. That is, only the n+-type semiconductor portions 56 are provided in regions directly under the source interconnection members 40 that divide the selection gate electrode film 16 for each of the blocks. The p+-type semiconductor portions 55 are provided on the insides of the blocks.
