FIGS. 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, and 15A illustrate perspective views of an example semiconductor device (or a portion of the example semiconductor device) during various fabrication stages, made by the method of FIGS. 2A-B, in accordance with some embodiments.
FIGS. 15B, 15C, 15D illustrate a top view, a cross-sectional view cut along a first lateral cross-section (e.g., along the X-direction), and a cross-sectional view cut along a second lateral cross-section (e.g., along the Y-direction), respectively, of the example semiconductor device, in accordance with some embodiments.
FIGS. 16A-B are plots of semiconductor channel thickness versus channel length and a cell current versus channel length, respectively, of the example semiconductor device of FIGS. 15A-D, in accordance with some embodiments.
FIGS. 17A-B illustrate cross-sectional views cut along a first lateral cross-section (e.g., along the X-direction) and a second lateral cross-section (e.g., along the Y-direction), respectively, of an example semiconductor device, in accordance with some embodiments.
FIGS. 18A-B are plots of a semiconductor channel thickness versus channel length and a cell current versus channel length, respectively, of the example semiconductor device of FIGS. 17A-B, in accordance with some embodiments.
