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Semiconductor memory devices and methods of manufacturing thereof

專利號(hào)
US11758734B2
公開日期
2023-09-12
申請(qǐng)人
Taiwan Semiconductor Manufacturing Company, Ltd.（TW Hsinchu）
發(fā)明人
Peng-Chun Liou; Zhiqiang Wu; Ya-Yun Cheng; Yi-Ching Liu; Meng-Han Lin
IPC分類
H10B51/20; H10B51/30
技術(shù)領(lǐng)域
channel,layers,in,trenches,direction,insulating,memory,layer,along,device
地域： Hsinchu

摘要

A semiconductor device includes a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a first lateral direction. The semiconductor device includes third conductive structures each extending along the first lateral direction. The third conductive structures are disposed across the first and second conductive structures. The semiconductor device includes a first semiconductor channel extending along the vertical direction. The first semiconductor channel is disposed between the third conductive structures and the first conductive structure, and between the third conductive structures and the second conductive structure. The first and second conductive structures each have a first varying width along the first lateral direction, and the first semiconductor channel has a second varying width along a second lateral direction.

說明書

The semiconductor channels 2022A-B and 2032A-B have a varying width that decrease along the first portion 1900A and increase along the second portion 1900B with increasing height in the Z-direction. The widths of the semiconductor channel segments 2022A-B and 2032A-B are defined as W1 at the top of the semiconductor device 500, W2 at the bottom of the semiconductor device 500 near the substrate, and W3 at the point of the semiconductor device in between the first portion 1900A and the second portion 1900B. In some embodiments, both W1 and W2 are greater than W3 as shown in FIG. 19B. In some embodiments, W1 is equal to W2. The varying width of the semiconductor channel segments 2022A-B and 2032A-B are designed to keep cell current constant with varying channel lengths. The length of the word lines 1902 in the Y-direction, Ly1, Ly2, and Ly3, result from the formation of the trenches. These lengths do not affect the channel lengths Lx1, Lx2, and Lx3 shown in FIG. 19A.

FIGS. 20A-B illustrate plots of semiconductor channel thickness versus channel length and cell current versus channel length that correspond to the embodiment of the semiconductor device 500 shown in FIGS. 19A-B.

權(quán)利要求

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