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Light-emitting devices with improved light outcoupling

專利號
US11793024B2
公開日期
2023-10-17
申請人
Kateeva, Inc.（US CA Newark）
發(fā)明人
Florian Pschenitzka; Christopher D. Favaro
IPC分類
H01L29/08; H10K50/844; H10K50/858; H10K102/00
技術(shù)領(lǐng)域
ri,inorganic,ink,composite,oled,meth,barrier,layer,stack,sub
地域： CA CA Newark

摘要

Optoelectronic devices that include a composite film in a multilayered encapsulation stack are provided. Also provided are methods of forming the light reflection-modifying structures, as well as other polymeric device layers, using inkjet printing. The composite films include a first, lower refractive index domain and a second, higher refractive index domain.

說明書

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CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 16/771,157, filed on Jun. 9, 2020, and now issued as U.S. Pat. No. 11,043,653, which is a National Stage of International Application No. PCT/US18/63492, filed on Nov. 30, 2018, which claims the benefit of U.S. provisional patent application No. 62/607,824, filed on Dec. 19, 2017, the entire contents of which are hereby incorporated herein by reference.

BACKGROUND

Multilayered encapsulation stacks composed of alternating inorganic and organic polymer films have been used to protect light-emitting devices from the damaging effects of exposure to water vapor and oxygen. Unfortunately, the difference between the refractive index (RI) of an inorganic layer in the stack and its neighboring lower refractive index organic polymer layer can result in total internal reflection of the light at the interface between the two layers, which reduces the fraction of light able to exit the device. Moreover, even in the absence of a high RI mismatch between the inorganic and organic polymer layers, light-emitting devices can suffer from limited light output due to total internal reflection of light at the interface between the terminal layer in an encapsulation stack and on overlying device layer or, in the absence of on overlying device layer, at the interface between the terminal layer in an encapsulation stack and air.

FIELD

權(quán)利要求

1
What is claimed is:1. An optoelectronic device comprising:an active region; anda multilayered encapsulation stack disposed over the active region, the multilayered encapsulation stack comprising a composite film having a first domain and a second domain, the second domain comprising a plurality of sub-domains, wherein the second domain comprises inorganic particles dispersed in a polymeric matrix and has a higher index of refraction than the first domain.2. The optoelectronic device of claim 1, wherein the optoelectronic device is an organic light-emitting diode device and the active region comprises a light-emitting pixel.3. The optoelectronic device of claim 2, wherein the light-emitting pixel is aligned with one of the sub-domains.4. The optoelectronic device of claim 1, wherein the multilayered encapsulation stack further comprises a plurality of inorganic barrier layers between the composite film and the active region.5. The optoelectronic device of claim 4, wherein the composite film is adjacent to a top inorganic barrier layer of the plurality of inorganic barrier layers, the first domain has a first refractive index, the top inorganic barrier layer has a second refractive index, and the first refractive index is the same as the second refractive index.6. The optoelectronic device of claim 4, wherein each inorganic particle comprises silicon nitride, silicon oxide, or silicon oxynitride.7. The optoelectronic device of claim 1, wherein each sub-domain has a cylindrical or conical shape.8. The optoelectronic device of claim 1, wherein the polymeric matrix is an acrylic matrix.9. The optoelectronic device of claim 1, further comprising a plurality of active regions including the active region, wherein each active region is aligned with one of the sub-domains.10. The optoelectronic device of claim 1, wherein the sub-domains are dome-shaped.11. An optoelectronic device comprising:a plurality of light-emitting pixels; anda multilayered encapsulation stack disposed over the light-emitting pixels, the multilayered encapsulation stack comprising a composite film having a first domain and a second domain, the second domain comprising a plurality of sub-domains, each sub-domain aligned with a pixel of the plurality of light-emitting pixels, wherein the second domain comprises oxide, nitride, or oxynitride inorganic particles dispersed in a polymeric matrix and has a higher index of refraction than the first domain.12. The optoelectronic device of claim 11, wherein the sub-domains are localized in clusters over the pixels.13. The optoelectronic device of claim 11, wherein the multilayered encapsulation stack further comprises a plurality of inorganic barrier layers.14. The optoelectronic device of claim 13, wherein the composite film is between two of the inorganic barrier layers.15. The optoelectronic device of claim 13, wherein a refractive index of the sub-domains and a refractive index of the inorganic barrier layers differ by no more than 15%.16. The optoelectronic device of claim 11, wherein each sub-domain has a cylindrical or conical shape.17. The optoelectronic device of claim 11, wherein the polymeric matrix is an acrylic matrix.18. The optoelectronic device of claim 11, wherein each sub-domain is dome-shaped.19. The optoelectronic device of claim 11, wherein the first domain comprises a first polymer and the second domain comprises a second polymer different from the first polymer.20. The optoelectronic device of claim 11, wherein the composite film is a planarizing film.
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