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Light-emitting device, electronic device, and lighting device

專(zhuān)利號(hào)
US11800734B2
公開(kāi)日期
2023-10-24
申請(qǐng)人
Semiconductor Energy Laboratory Co., Ltd.
發(fā)明人
Shunpei Yamazaki; Takeyoshi Watabe; Tomohiro Kubota; Airi Ueda; Satoshi Seo; Nobuharu Ohsawa; Yuko Kubota
IPC分類(lèi)
H01L51/50; H10K50/115; H10K50/16; H10K50/17; H10K85/60
技術(shù)領(lǐng)域
emitting,light,layer,skeleton,phenyl,in,group,oxide,yl,9h
地域: Kanagawa-ken

摘要

A light-emitting apparatus with low power consumption is provided. A light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a layer including a material with a refractive index lower than or equal to 1.75 at 467 nm. The first color conversion layer includes a first substance capable of emission by absorbing light. Light emitted from the first light-emitting device enters the first color conversion layer.

說(shuō)明書(shū)

In FIG. 8A, the color conversion layers (a red color conversion layer 1034R and a green color conversion layer 1034G) are provided on a transparent base material 1033. A black matrix 1035 may be additionally provided. The transparent base material 1033 provided with the color conversion layers and the black matrix is aligned and fixed to the substrate 1001. Note that the color conversion layers and the black matrix 1035 may be covered with an overcoat layer 1036.

FIG. 8B illustrates an example in which the color conversion layers (the red color conversion layer 1034R and the green color conversion layer 1034G) are provided between the gate insulating film 1003 and the first interlayer insulating film 1020. As in the structure, the coloring layers may be provided between the substrate 1001 and the sealing substrate 1031.

權(quán)利要求

1
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