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Light-emitting device, electronic device, and lighting device

專利號(hào)
US11800734B2
公開(kāi)日期
2023-10-24
申請(qǐng)人
Semiconductor Energy Laboratory Co., Ltd.
發(fā)明人
Shunpei Yamazaki; Takeyoshi Watabe; Tomohiro Kubota; Airi Ueda; Satoshi Seo; Nobuharu Ohsawa; Yuko Kubota
IPC分類
H01L51/50; H10K50/115; H10K50/16; H10K50/17; H10K85/60
技術(shù)領(lǐng)域
emitting,light,layer,skeleton,phenyl,in,group,oxide,yl,9h
地域： Kanagawa-ken

摘要

A light-emitting apparatus with low power consumption is provided. A light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a layer including a material with a refractive index lower than or equal to 1.75 at 467 nm. The first color conversion layer includes a first substance capable of emission by absorbing light. Light emitted from the first light-emitting device enters the first color conversion layer.

說(shuō)明書(shū)

The device structures of the light-emitting devices 1 and 2 are listed in the following table.

TABLE 2 Light-emitting device 1 Light-emitting device 2 Electron-injection layer 1 nm Liq Electron-transport layer 30 nm ZADN:Liq (1:1) Light-emitting layer 25 nm αN-βNPAnth:3,10PCA2Nbf(IV)-02 (1:0.015) Electron-blocking layer 10 nm DBfBB1TP

權(quán)利要求

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