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Light-emitting device, electronic device, and lighting device

專利號
US11800734B2
公開日期
2023-10-24
申請人
Semiconductor Energy Laboratory Co., Ltd.
發(fā)明人
Shunpei Yamazaki; Takeyoshi Watabe; Tomohiro Kubota; Airi Ueda; Satoshi Seo; Nobuharu Ohsawa; Yuko Kubota
IPC分類
H01L51/50; H10K50/115; H10K50/16; H10K50/17; H10K85/60
技術(shù)領(lǐng)域
emitting,light,layer,skeleton,phenyl,in,group,oxide,yl,9h
地域: Kanagawa-ken

摘要

A light-emitting apparatus with low power consumption is provided. A light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a layer including a material with a refractive index lower than or equal to 1.75 at 467 nm. The first color conversion layer includes a first substance capable of emission by absorbing light. Light emitted from the first light-emitting device enters the first color conversion layer.

說明書

FIGS. 29 to 34 and Table 3 show that the light-emitting device 1 including the material with a refractive index lower than or equal to 1.75 in the blue light-emitting region has higher current efficiency and a more favorable blue index than the light-emitting device 2. By combining such a light-emitting device with a color conversion layer, a light-emitting apparatus with high efficiency can be obtained.

This application is based on Japanese Patent Application Serial No. 2019-203031 filed with Japan Patent Office on Nov. 8, 2019, the entire contents of which are hereby incorporated by reference.

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