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Light-emitting device, electronic device, and lighting device

專利號(hào)
US11800734B2
公開日期
2023-10-24
申請(qǐng)人
Semiconductor Energy Laboratory Co., Ltd.
發(fā)明人
Shunpei Yamazaki; Takeyoshi Watabe; Tomohiro Kubota; Airi Ueda; Satoshi Seo; Nobuharu Ohsawa; Yuko Kubota
IPC分類
H01L51/50; H10K50/115; H10K50/16; H10K50/17; H10K85/60
技術(shù)領(lǐng)域
emitting,light,layer,skeleton,phenyl,in,group,oxide,yl,9h
地域: Kanagawa-ken

摘要

A light-emitting apparatus with low power consumption is provided. A light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a layer including a material with a refractive index lower than or equal to 1.75 at 467 nm. The first color conversion layer includes a first substance capable of emission by absorbing light. Light emitted from the first light-emitting device enters the first color conversion layer.

說明書

FIG. 25 shows measurement data of the refractive index of mmtBumTPchPAF.

FIG. 26 shows measurement data of the refractive index of CdoPchPAF.

FIG. 27 shows an emission spectrum used for calculation.

FIG. 28 shows calculation results of the relationship between the refractive index of a color conversion layer (a QD layer) and the amount of light reaching the color conversion layer.

FIG. 29 shows the luminance-current density characteristics of light-emitting devices 1 and 2.

FIG. 30 shows the current efficiency-luminance characteristics of the light-emitting devices 1 and 2.

FIG. 31 shows the luminance-voltage characteristics of the light-emitting devices 1 and 2.

FIG. 32 shows the current-voltage characteristics of the light-emitting devices 1 and 2.

FIG. 33 shows the blue index-luminance characteristics of the light-emitting devices 1 and 2.

FIG. 34 shows the emission spectra of the light-emitting devices 1 and 2.

FIG. 35 shows the refractive indexes of dchPAF and PCBBiF.

DETAILED DESCRIPTION OF THE INVENTION

權(quán)利要求

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