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Light-emitting device, electronic device, and lighting device

專利號
US11800734B2
公開日期
2023-10-24
申請人
Semiconductor Energy Laboratory Co., Ltd.
發(fā)明人
Shunpei Yamazaki; Takeyoshi Watabe; Tomohiro Kubota; Airi Ueda; Satoshi Seo; Nobuharu Ohsawa; Yuko Kubota
IPC分類
H01L51/50; H10K50/115; H10K50/16; H10K50/17; H10K85/60
技術領域
emitting,light,layer,skeleton,phenyl,in,group,oxide,yl,9h
地域: Kanagawa-ken

摘要

A light-emitting apparatus with low power consumption is provided. A light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a layer including a material with a refractive index lower than or equal to 1.75 at 467 nm. The first color conversion layer includes a first substance capable of emission by absorbing light. Light emitted from the first light-emitting device enters the first color conversion layer.

說明書

The formation of the hole-injection layer 111 can improve the hole-injection property, which allows the light-emitting device to be driven at a low voltage. In addition, the organic compound having an acceptor property is easy to use because it is easily deposited by vapor deposition.

A material having a hole-transport property is used to form the hole-transport layer 112. The material having a hole-transport material preferably has a hole mobility higher than or equal to 1×10?6 cm2/Vs.

權利要求

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