Method for manufacturing thermal dispersion layer in programmable metallization cell
地域：
Hsin-Chu
摘要
Some embodiments relate to a method for manufacturing a memory device. The method includes forming a bottom electrode over a substrate. A heat dispersion layer is formed over the bottom electrode. A dielectric layer is formed over the heat dispersion layer. A top electrode is formed over the dielectric layer. The heat dispersion layer comprises a first dielectric material.
說(shuō)明書(shū)
This Application is a Divisional of U.S. application Ser. No. 16/114,607, filed on Aug. 28, 2018, which claims the benefit of U.S. Provisional Application No. 62/692,354, filed on Jun. 29, 2018. The contents of the above-referenced Patent Applications are hereby incorporated by reference in their entirety.
Many modern day electronic devices contain electronic memory. Electronic memory may be volatile memory or non-volatile memory. Non-volatile memory is able to retain its stored data in the absence of power, whereas volatile memory loses its stored data when power is lost. Programmable metallization cell (PMC) random access memory (RAM), which may also be referred to as conductive bridging RAM, CBRAM, Nanobridge, or electrolytic memory, is one promising candidate for next generation non-volatile electronic memory due to advantages over current electronic memory. Compared to current non-volatile memory, such as flash random-access memory, PMCRAM typically has better performance and reliability. Compared to current volatile memory, such as dynamic random-access memory (DRAM) and static random-access memory (SRAM), PMCRAM typically has better performance and density, with lower power consumption.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
權(quán)利要求
What is claimed is:1. A method for manufacturing a memory device, comprising:forming a bottom electrode over a substrate; forming a heat dispersion layer over the bottom electrode, wherein a bottommost surface of the heat dispersion layer is above a bottom surface of the bottom electrode; forming a dielectric layer over the heat dispersion layer; forming a top electrode over the dielectric layer; and wherein the heat dispersion layer comprises a first dielectric material. 2. The method of claim 1 , wherein forming the dielectric layer includes:etching the dielectric layer such that a width of the dielectric layer discretely increases from a top surface of the dielectric layer in a direction towards the substrate. 3. The method of claim 1 , wherein the first dielectric material has a thermal conductivity greater than 100 W/m-K. 4. The method of claim 1 , wherein the first dielectric material is comprised of aluminum nitride, silicon carbide, beryllium oxide, or boron nitride. 5. The method of claim 1 , wherein the dielectric layer comprises a second dielectric material different than the first dielectric material. 6. The method of claim 1 , further comprising:forming a metal layer between the top electrode and the dielectric layer, wherein the metal layer comprises a different material than the bottom electrode. 7. The method of claim 1 , wherein a thermal conductivity of the heat dispersion layer is greater than a thermal conductivity of the bottom electrode. 8. The method of claim 1 , further comprising:forming a sidewall spacer around sidewalls of the top electrode and sidewalls of the dielectric layer, wherein the sidewall spacer contacts an upper surface of the dielectric layer. 9. The method of claim 1 , wherein opposing sidewalls of the dielectric layer are spaced between or aligned with opposing sidewalls of the heat dispersion layer. 10. A method for manufacturing a memory device, comprising:forming a bottom electrode over a substrate; forming a first dielectric layer over the bottom electrode; forming a second dielectric layer over the first dielectric layer; forming a top electrode over the second dielectric layer; forming a metal layer between the top electrode and the second dielectric layer, wherein outer sidewalls of the metal layer are spaced laterally between outer sidewalls of the second dielectric layer; and wherein a thermal conductivity of the first dielectric layer is greater than a thermal conductivity of the bottom electrode. 11. The method of claim 10 , wherein a thermal conductivity of the second dielectric layer is less than the thermal conductivity of the bottom electrode. 12. The method of claim 10 , wherein forming the second dielectric layer includes performing an etching process on the first dielectric layer and the second dielectric layer such that the second dielectric layer comprises a first pair of outer sidewalls aligned with outer sidewalls of the first dielectric layer, wherein the second dielectric layer comprises a second pair of outer sidewalls aligned with outer sidewalls of the top electrode, wherein the second pair of outer sidewalls are spaced laterally between the first pair of outer sidewalls. 13. The method of claim 10 , further comprising:forming a sidewall spacer around the top electrode and the second dielectric layer such that the sidewall spacer extends continuously from an upper surface of the top electrode, along a sidewall of the second dielectric layer, to an upper surface of the second dielectric layer. 14. The method of claim 10 , further comprising:forming a bottom interconnect via over the substrate; and forming a lower dielectric layer over the bottom interconnect via, wherein the bottom electrode extends from an upper surface of the lower dielectric layer, along opposing sidewalls of the lower dielectric layer, to an upper surface of the bottom interconnect via. 15. The method of claim 10 , wherein the first dielectric layer comprises aluminum nitride, silicon carbide, beryllium oxide, or boron nitride, and wherein the second dielectric layer comprises hafnium oxide, zirconium oxide, aluminum oxide, amorphous silicon, or silicon nitride. 16. A method for manufacturing a memory device, comprising:forming a bottom electrode over an interconnect wire, wherein the interconnect wire is formed over a substrate; forming a heat dispersion layer over the bottom electrode; forming a dielectric layer over the heat dispersion layer; forming a metal layer over the dielectric layer; forming a top electrode over the metal layer; forming a masking layer over the top electrode, wherein the masking layer covers a center region of the top electrode, wherein the masking layer leaves a sacrificial portion of the top electrode exposed; performing a first etch process to remove a portion of the bottom electrode, heat dispersion layer, dielectric layer, metal layer, and top electrode below the sacrificial portion of the top electrode, wherein a width of the dielectric layer increases from a top surface of the dielectric layer in a direction towards the substrate; and forming a sidewall spacer around the top electrode, metal layer, and a portion of the dielectric layer. 17. The method of claim 16 , wherein the dielectric layer comprises a first dielectric material and the heat dispersion layer comprises a second dielectric material different than the first dielectric material. 18. The method of claim 16 , further comprising:forming a first inter-level dielectric (ILD) layer over the sidewall spacer; forming a top electrode via over the top electrode; forming a second ILD layer over the first ILD layer; forming a first conductive via over the top electrode via; and forming a first conductive wire over the first conductive via, wherein the first conductive wire extends past sidewalls of the first conductive via. 19. The method of claim 18 , further comprising:forming a second interconnect wire within a logic region; forming a second conductive via over the second interconnect wire; and forming a second conductive wire over the second conductive via, wherein the second conductive wire extends past sidewalls of the second conductive via. 20. The method of claim 16 , wherein a thermal conductivity of the heat dispersion layer is less than a thermal conductivity of the metal layer.
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