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Method for manufacturing thermal dispersion layer in programmable metallization cell

專利號
US11800823B2
公開日期
2023-10-24
申請人
Taiwan Semiconductor Manufacturing Co., Ltd.(TW Hsinchu)
發(fā)明人
Fa-Shen Jiang; Hsing-Lien Lin
IPC分類
H10N70/20; G11C13/00; H10N70/00
技術(shù)領(lǐng)域
electrode,layer,dielectric,conductive,sidewalls,dispersion,ild,bottom,pmcram,top
地域: Hsin-Chu

摘要

Some embodiments relate to a method for manufacturing a memory device. The method includes forming a bottom electrode over a substrate. A heat dispersion layer is formed over the bottom electrode. A dielectric layer is formed over the heat dispersion layer. A top electrode is formed over the dielectric layer. The heat dispersion layer comprises a first dielectric material.

說明書

In some embodiments, the conductive bridge 304 comprises two sections. A first section 306, in some embodiments the first section 306 contains the same physical shape and characteristics of the conductive base (302 of FIG. 3A). A bottom surface of a second section 308 is in direct contact with a top surface of the first section 306. The bottom surface of the second section 308 has the same width as the top surface of the first section 306. A width of a top surface of the second section 308 is less than the width of the bottom surface of the second section 308. Sidewalls of the first section 306 are angled at a first non-zero angle θ relative to a line perpendicular to the top surface of the heat dispersion layer 108. Sidewalls of the second section 308 are angled at a second non-zero angle ? relative to a line perpendicular to the top surface of the heat dispersion layer 108. The first non-zero angle θ is a different angle than the second non-zero angle ?. In some embodiments, the first non-zero angle θ is greater than the second non-zero angle ?. In some embodiments, the second non-zero angle ? is within a range of 1 degree and 60 degrees. In some embodiments, the first non-zero angle θ is within a range of 1 degree and 60 degrees.

權(quán)利要求

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