Method for manufacturing thermal dispersion layer in programmable metallization cell
地域：
Hsin-Chu
摘要
Some embodiments relate to a method for manufacturing a memory device. The method includes forming a bottom electrode over a substrate. A heat dispersion layer is formed over the bottom electrode. A dielectric layer is formed over the heat dispersion layer. A top electrode is formed over the dielectric layer. The heat dispersion layer comprises a first dielectric material.
說明書
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
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