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Display panel and display device including partition wall

專利號
US11805674B2
公開日期
2023-10-31
申請人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.(JP Atsugi)
發(fā)明人
Daiki Nakamura; Nozomu Sugisawa
IPC分類
H10K50/85; H10K50/86; H10K50/84; H10K59/00; H10K59/12; H01L33/44; H05B33/22; G09F9/30; H10K50/856; H10K50/828; H10K50/844; H10K59/90; H10K50/818; H10K59/123
技術領域
display,layer,insulating,light,electrode,region,in,panel,emitting,visible
地域: Atsugi

摘要

A display device including display regions with inconspicuous seam is provided. The display device includes a first display panel and a second display panel. The first display panel includes a first display region and a visible-light-transmitting region. The second display panel includes a second display region. The first display region is adjacent to the visible-light-transmitting region. The first display region includes a first light-emitting element and a second light-emitting element. A first common electrode included in the first light-emitting element includes a portion in contact with a second common electrode included in the second light-emitting element. The first common electrode has a function of reflecting visible light. The second common electrode has a function of transmitting visible light. The second light-emitting element is positioned closer to the visible-light-transmitting region than the first light-emitting element. The second display region includes a portion overlapping with the second light-emitting element and a portion overlapping with the visible-light-transmitting region.

說明書

In particular, a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film are preferable as the insulating layer 103 and the protective layer 105 because of a high moisture barrier property.

An inorganic film containing ITO, Ga—Zn oxide, Al—Zn oxide, In—Ga—Zn oxide, or the like can also be used as the protective layer 105. The inorganic film preferably has high resistance, specifically, higher resistance than the common electrode 113b. The inorganic film may further contain nitrogen.

The visible-light-transmitting conductive film used as the common electrode 113b and the visible-light-transmitting inorganic film used as the protective layer 105 may contain a common metal element, for example. Adhesion between the common electrode 113b and the protective layer 105 can be increased when the two films contain a common metal element, whereby film separation and entry of impurities from an interface can be inhibited.

A. first ITO film can be used as the common electrode 113b and a second ITO film can be used as the protective layer 105, for example. The second ITO film is preferably a film that has a higher resistivity than the first ITO film. Furthermore, a first Ga—Zn oxide film can be used as the common electrode 113b and a second Ga—Zn oxide film can be used as the protective layer 105, for example. The second Ga—Zn oxide film is preferably a film that has a higher resistivity than the first Ga—Zn oxide film.

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