Display panel and display device including partition wall
摘要
說(shuō)明書
The insulating layer 103 formed before the fabrication of the light-emitting element can be deposited at a high temperature. By setting substrate temperature during deposition to a high temperature (e.g., higher than or equal to 100° C. and lower than or equal to 350° C.), a dense film with a high barrier property can be formed. Not only a sputtering method and an ALD method but also a CVD method is suitable for forming the insulating layer 103. A CVD method has a high deposition rate; thus, it is preferable.
As the insulating layer 103 or the protective layer 105, two or more insulating films formed by different deposition methods may be stacked.
It is preferable that a first inorganic film be formed by a sputtering method and a second inorganic film be formed by an ALD method, for example.
A film formed by a sputtering method contains fewer impurities and has higher density than a film formed by an ALD method. The film formed by an ALD method has higher step coverage and is less likely to be influenced by the shape of a deposition surface than the film formed by a sputtering method.
The first inorganic film contains few impurities and has high density. The second inorganic film is formed so as to cover a portion which is not sufficiently covered with the first inorganic film by the influence of a step of the formation surface. Thus, it is possible to form a protective layer capable of further reducing diffusion of water or the like than a protective layer in which only one of the inorganic films is formed.
