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Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications

專利號
US11805703B2
公開日期
2023-10-31
申請人
Arizona Board of Regents on Behalf of the University of Arizona（US AZ Tucson）
發(fā)明人
Weigang Wang; Ty Newhouse-Illige
IPC分類
H10N50/10; G11C11/16; H10N50/80; H10N50/85
技術(shù)領(lǐng)域
gdox,pmtj,pmtjs,cofeb,tmr,in,fm,hic,gd,xmcd
地域： AZ AZ Tucson

摘要

Various examples are provided for magnetic tunnel junctions and applications thereof. In one example, a magnetic tunnel junction (MTJ) device includes a first ferromagnetic (FM) layer; a gadolinium oxide (GdOX) tunnel barrier disposed on the first ferromagnetic layer; and a second FM layer disposed on the GdOX tunnel barrier. In another example, a perpendicular MTJ (pMTJ) device includes a first layer including a magnetic material; a tunnel barrier disposed on the first layer to form the pMTJ; and a second layer including the magnetic material, the second layer disposed on the tunnel barrier.

說明書

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority to, and the benefit of, co-pending U.S. provisional application entitled “Magnetic Tunnel Junctions with Voltage Tunable Interlayer Coupling for Memory and Sensor Applications” having Ser. No. 62/401,314, filed Sep. 29, 2016, which is hereby incorporated by reference in its entirety.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

This invention was made with government support under Grant Nos. ECCS1310338 and 1053854, awarded by NSF; Grant No. DE-AC02-06CH11357 awarded by DOE; and Grant No. HR0011-13-3-0002, awarded by DARPA. The government has certain rights in the invention.

BACKGROUND

In spintronics, information can be stored with the spin orientations of nanomagnets. A nanomagnet can be switched by a magnetic field governed by Ampere's Law, or by current-induced spin transfer torques (STT) and spin-orbit torques (SOT). Lowering the switching energy of the nanomagnets in magnetic tunnel junctions can improve operation of the devices by reducing heating.

SUMMARY

權(quán)利要求

1
Therefore, at least the following is claimed:1. A magnetic tunnel junction (MTJ) device, comprising:a first ferromagnetic (FM) layer, where the first FM layer is a fixed FM layer consisting of a single layer of FM material having a first thickness;a gadolinium oxide (GdOX) tunnel barrier having a first side disposed on a first side of the first ferromagnetic layer, where the GdOX tunnel barrier comprises Gd2O3, and a resistance state of the MTJ device is controllable at room temperature;a first buffering layer disposed on a second side of the first FM layer opposite the GdOX tunnel barrier;a second FM layer, where the second FM layer is a free FM layer consisting of a single layer of FM material having a second thickness greater than the first thickness, the second FM layer having a first side disposed on a second side of the GdOX tunnel barrier, where the FM material of the second layer has the same material composition as the FM material of the first layer; anda second buffering layer disposed on a second side of the second FM layer opposite the GdOx tunnel barrier.2. The MTJ device of claim 1, wherein the GdOX tunnel barrier between the first and second FM layers forms a perpendicular MTJ (pMTJ).3. The MTJ device of claim 1, wherein application of a positive voltage pulse across the free and fixed layers under zero magnetic field sets the MTJ device to a non-volatile low resistance state.4. The MTJ device of claim 1, wherein application of a negative voltage pulse across the free and fixed layers under zero magnetic field sets the MTJ device to a non-volatile high resistance state.5. The MJT device of claim 4, wherein the negative voltage pulse establishes antiferromagnetic (AFM) coupling between the free and fixed layers.6. The MTJ device of claim 1, wherein a thickness of the GdOX tunnel barrier is in a range from about 1 nm to about 3.5 nm.7. The MTJ device of claim 1, wherein the first and second FM layers comprise cobalt iron boron (CoFeB).8. The MTJ device of claim 1, wherein the thickness of the first FM layer is in a range from about 0.7 nm to about 0.9 nm and the thickness of the second FM layer is in a range from about 1.5 nm to about 1.6 nm.9. A sensor comprising the MTJ device of claim 1, where the sensor detects a magnetic field.10. A memory storage system comprising the MTJ device of claim 1.11. The MTJ device of claim 1, wherein a thickness of the GdOX tunnel barrier is greater than 2 nm.
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