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Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications

專利號(hào)
US11805703B2
公開日期
2023-10-31
申請(qǐng)人
Arizona Board of Regents on Behalf of the University of Arizona(US AZ Tucson)
發(fā)明人
Weigang Wang; Ty Newhouse-Illige
IPC分類
H10N50/10; G11C11/16; H10N50/80; H10N50/85
技術(shù)領(lǐng)域
gdox,pmtj,pmtjs,cofeb,tmr,in,fm,hic,gd,xmcd
地域: AZ AZ Tucson

摘要

Various examples are provided for magnetic tunnel junctions and applications thereof. In one example, a magnetic tunnel junction (MTJ) device includes a first ferromagnetic (FM) layer; a gadolinium oxide (GdOX) tunnel barrier disposed on the first ferromagnetic layer; and a second FM layer disposed on the GdOX tunnel barrier. In another example, a perpendicular MTJ (pMTJ) device includes a first layer including a magnetic material; a tunnel barrier disposed on the first layer to form the pMTJ; and a second layer including the magnetic material, the second layer disposed on the tunnel barrier.

說明書

Next, the minor TMR loops for the three states are shown in FIG. 4B. The interlayer coupling field (HIC) is revealed by the center position of the loop (marked by arrows in FIG. 3b). The initial state of the interlayer coupling is negative (AFM), with HIC=?42 Oe. After the application of +VSET, two striking features emerge. First, HC′-TOP is dramatically reduced (from 150 Oe to 45 Oe), much more pronounced than the reduction of He-TOP (from 100 Oe to 80 Oe). Second and most surprisingly, the sign of the interlayer coupling is changed; namely, the coupling is now positive (FM) with HIC=+37 Oe. Remarkably, with the application of ?VSET, the center of the minor loop can be shifted back to the left, with an even more negative HIC of ?51 Oe. The results illustrated in FIG. 4B represent the first demonstration of VCIC in an MTJ system, where both the magnitude and sign of the interlayer coupling can be changed by applied voltage.

權(quán)利要求

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