Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications
摘要
說明書
The VCIC with thick GdOX (>2 nm) can be described with a model considering the voltage-driven oxidation level changes of Fe, the large induced moment of the Gd ions that is proportional to the amount of free Fe, and a voltage dependent distribution of correlated moments in the Gd ions. Since oxygen in the GdOX barrier can be reversibly moved toward or away from the interface by applying voltage, the correlation of the magnetic moment distributions between the two interfaces created by the oxygen transportation may be responsible for the observed VCIC. The XMCD has shown that the Gd ions display significant magnetic moments due to the proximity effect with CoFeB. These large induced Gd moments may contribute to the interplay coupling via dipolar interaction, especially in samples with thick barriers (>2 nm).
Consider two thin magnetic layers separated by a distance d. The coupling energy between these two layers can be expressed as:
