Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications
地域：
AZ
AZ Tucson
摘要
Various examples are provided for magnetic tunnel junctions and applications thereof. In one example, a magnetic tunnel junction (MTJ) device includes a first ferromagnetic (FM) layer; a gadolinium oxide (GdOX) tunnel barrier disposed on the first ferromagnetic layer; and a second FM layer disposed on the GdOX tunnel barrier. In another example, a perpendicular MTJ (pMTJ) device includes a first layer including a magnetic material; a tunnel barrier disposed on the first layer to form the pMTJ; and a second layer including the magnetic material, the second layer disposed on the tunnel barrier.
說明書
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where < > refers to the spatial average over the plane of the layers (for a fixed ρ1?ρ2). Due to the much stronger PMA of the bottom CoFeB layer (FIG. S3 ), the change in magnetic properties of top CoFeB layer by voltage to be much larger than that of bottom CoFeB, which is supported by FIG. 6B . Assuming that the applied voltage from the positive to negative polarity results in a change of the correlation function from the correlated (ξ12>0) to the anti-correlated (ξ12<0) state, i.e., the oxidation level (therefore the induced moment from Gd ions) of the two interfaces is likely similar if |ρ1?ρ2|<r0 for a positive voltage, where r0 is the correlation length. For a negative voltage, the oxidation level of the two interfaces is likely to be less similar, giving rise to ξ12<0. With the above assumptions, the coupling field HIC≡?δE/δδm1 can be estimated. The z-component of the coupling field is thus,
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