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Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications

專利號(hào)
US11805703B2
公開日期
2023-10-31
申請(qǐng)人
Arizona Board of Regents on Behalf of the University of Arizona（US AZ Tucson）
發(fā)明人
Weigang Wang; Ty Newhouse-Illige
IPC分類
H10N50/10; G11C11/16; H10N50/80; H10N50/85
技術(shù)領(lǐng)域
gdox,pmtj,pmtjs,cofeb,tmr,in,fm,hic,gd,xmcd
地域： AZ AZ Tucson

摘要

Various examples are provided for magnetic tunnel junctions and applications thereof. In one example, a magnetic tunnel junction (MTJ) device includes a first ferromagnetic (FM) layer; a gadolinium oxide (GdOX) tunnel barrier disposed on the first ferromagnetic layer; and a second FM layer disposed on the GdOX tunnel barrier. In another example, a perpendicular MTJ (pMTJ) device includes a first layer including a magnetic material; a tunnel barrier disposed on the first layer to form the pMTJ; and a second layer including the magnetic material, the second layer disposed on the tunnel barrier.

說明書

FIG. 14C illustrates the detailed temperature dependence of HIC from RT down to 11 K. It shows a nontrivial dependence that is not reflected by any of the models of IC described previously and does not match previous experimental data from other MTJ systems. Similarly, it does not follow the smooth temperature dependence of the switching field as shown in the inset of FIG. 14C, further confirming that it is not following the trend of the sample's PMA. In addition to the large magnitude and sign change shown between RT and 11 K in FIGS. 14A and 14B, there is a complex temperature dependence at intermediate temperatures, including multiple switches between AFM and FM coupling states, as shown in FIG. 14C.

權(quán)利要求

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