As described in the background art, as shown in FIG. 1 and FIG. 2, there are gaps in BL contacts of the semiconductor structure that increase the resistances of the BL contacts and reduce the transmission performance of the semiconductor structure. Through research, the inventor finds that the above problem is ascribed to the deep BL contact regions. Due to restrictions of a deposition process, it is likely to form gaps in the BL contacts during formation of the BL contacts in the BL contact regions.

In view of the above technical problem, by controlling the thickness ratio of the sacrificial layer to the first initial conductive layer, and decreasing the thickness of the sacrificial layer in the embodiment of the present disclosure, when the sacrificial layer and the first initial conductive layer are etched subsequently, the sacrificial layer is etched completely, and the first initial conductive layer originally shielded by the sacrificial layer can also be removed by a certain thickness, such that the retained first initial conductive layer is thinner and the BL contact regions are shallower. When the second conductive layer is deposited in the BL contact regions, the formation of gaps in the second conductive layer can be avoided to reduce resistances of the BL contacts and improve transmission performance of the semiconductor structure.