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Method of screening for electron transport material and hole blocking material used in organic light emitting device

專利號(hào)
US11856809B2
公開日期
2023-12-26
申請(qǐng)人
LG CHEM, LTD.(KR Seoul)
發(fā)明人
Ji Hye Kim; Sung Kil Hong; Minseung Chun; Yeon Hwan Kim; Jae Tak Lee
IPC分類
H10K50/16; H10K71/70; H10K71/00; H10K85/60; H10K50/18; H10K101/50
技術(shù)領(lǐng)域
electron,transport,donating,emitting,material,hole,layer,blocking,organic,light
地域: Seoul

摘要

A method of screening for an electron transport material included in an electron transport layer of an organic light emitting device and a method of screening for a hole blocking material included in a hole blocking layer of the organic light emitting device, the method using a heterogeneous electron transfer rate constant (K) value to select the electron transport material and an electron donating rate constant kd to select the hole blocking material, thereby capable of realizing the organic light emitting device having an excellent balance between luminous efficiency and lifetime.

說明書

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a National Stage Application of International Application No. PCT/KR2020/001464 filed on Jan. 31, 2020, which claims priority to Korean Patent Application No. 10-2019-0013442 filed on Feb. 1, 2019, disclosures of which are hereby incorporated by reference herein in their entireties.

TECHNICAL FIELD

The present disclosure relates to a method of screening for an electron transport material which may be used as a material of an electron transport layer of an organic light emitting device and a method of screening for a hole blocking material which may be used as a material of a hole blocking layer.

BACKGROUND

In general, an organic light emitting phenomenon refers to a phenomenon where electric energy is converted into light energy by using an organic material. An organic light emitting device using the organic light emitting phenomenon has a wide viewing angle, an excellent contrast, and a fast response time, and has excellent luminance, driving voltage, and response speed characteristics, and thus a number of studies are being conducted.

權(quán)利要求

1
The invention claimed is:1. A method of screening for an electron transport material included in an electron transport layer of an organic light emitting device, the method comprising the steps of:1) calculating heterogeneous electron transfer rate constant (K) of electron transport material candidates by the following Mathematical equation 1; and2) determining an electron transport material candidate of which the heterogeneous electron transfer rate constant (K) value calculated by the following Mathematical equation 1 is 1.2 to 1.65 as the electron transport material of the organic light emitting device, K = k d + k a 2 [ Mathematical ? equation ? 1 ] in Mathematical equation 1,kd represents an electron donating rate constant and ka represents an electron accepting rate constant.2. The method of claim 1,wherein in the step 1),the heterogeneous electron transfer rate constant (K) of the electron transport material candidate is calculated by using an electron donating rate constant kd (donating k) value obtained from an anodic peak of a current-potential (C-V) curve and an electron accepting rate constant ka (accepting k) value obtained from a cathodic peak of the C-V curve, after dissolving the electron transport material candidate in dimethylformamide (DMF), and plotting the C-V curve according to cyclic voltammetry.3. The method of claim 2,wherein the C-V curve of the electron transport material candidate is measured at a scan rate of 0.01 V/s to 0.5 V/s.4. The method of claim 1,wherein the electron transport material is included together with a metal complex compound in the electron transport layer.5. A method of screening for a hole blocking material included in a hole blocking layer of an organic light emitting device, the method comprising the steps of:1i) calculating electron donating rate constant kd of hole blocking material candidates by the following Mathematical equation 2-1; and2ii) determining a hole blocking material candidate of which the electron donating rate constant kd value calculated by the following Mathematical equation 2-1 is 1.25 to 2.25 as the hole blocking material of the organic light emitting device E pa = E a 0 - ( RT α ? n ? F ) ? ln ( RTk d α ? n ? F ) + ( RT α ? n ? F ) ? ln ? v [ Mathematical ? equation ? 2 - 1 ] in Mathematical equation 2-1,Epa represents an anodic peak potential at a maximum current, Ea0′ represents a formal potential at an anodic peak, v represents a scan rate, α represents an electron transfer coefficient, n represents the number of electrons, F represents the Faraday constant (96480 C/mol), R represents the gas constant (8.314 mol?1K?1), and T represents the absolute temperature (298 K).6. The method of claim 5,wherein in the step 1),the electron donating rate constant kd (donating k) of the hole blocking material candidate is calculated from an anodic peak of a current-potential (C-V) curve, after dissolving the hole blocking material candidate in dimethylformamide (DMF), and plotting the C-V curve according to cyclic voltammetry.7. The method of claim 6,wherein the C-V curve of the hole blocking material candidate is measured at a scan rate of 0.01 V/s to 0.5 V/s.
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