The invention claimed is:1. A method of screening for an electron transport material included in an electron transport layer of an organic light emitting device, the method comprising the steps of:1) calculating heterogeneous electron transfer rate constant (K) of electron transport material candidates by the following Mathematical equation 1; and2) determining an electron transport material candidate of which the heterogeneous electron transfer rate constant (K) value calculated by the following Mathematical equation 1 is 1.2 to 1.65 as the electron transport material of the organic light emitting device,in Mathematical equation 1,kd represents an electron donating rate constant and ka represents an electron accepting rate constant.2. The method of claim 1,wherein in the step 1),the heterogeneous electron transfer rate constant (K) of the electron transport material candidate is calculated by using an electron donating rate constant kd (donating k) value obtained from an anodic peak of a current-potential (C-V) curve and an electron accepting rate constant ka (accepting k) value obtained from a cathodic peak of the C-V curve, after dissolving the electron transport material candidate in dimethylformamide (DMF), and plotting the C-V curve according to cyclic voltammetry.3. The method of claim 2,wherein the C-V curve of the electron transport material candidate is measured at a scan rate of 0.01 V/s to 0.5 V/s.4. The method of claim 1,wherein the electron transport material is included together with a metal complex compound in the electron transport layer.5. A method of screening for a hole blocking material included in a hole blocking layer of an organic light emitting device, the method comprising the steps of:1i) calculating electron donating rate constant kd of hole blocking material candidates by the following Mathematical equation 2-1; and2ii) determining a hole blocking material candidate of which the electron donating rate constant kd value calculated by the following Mathematical equation 2-1 is 1.25 to 2.25 as the hole blocking material of the organic light emitting devicein Mathematical equation 2-1,Epa represents an anodic peak potential at a maximum current, Ea0′ represents a formal potential at an anodic peak, v represents a scan rate, α represents an electron transfer coefficient, n represents the number of electrons, F represents the Faraday constant (96480 C/mol), R represents the gas constant (8.314 mol?1K?1), and T represents the absolute temperature (298 K).6. The method of claim 5,wherein in the step 1),the electron donating rate constant kd (donating k) of the hole blocking material candidate is calculated from an anodic peak of a current-potential (C-V) curve, after dissolving the hole blocking material candidate in dimethylformamide (DMF), and plotting the C-V curve according to cyclic voltammetry.7. The method of claim 6,wherein the C-V curve of the hole blocking material candidate is measured at a scan rate of 0.01 V/s to 0.5 V/s.