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Method of screening for electron transport material and hole blocking material used in organic light emitting device

專利號
US11856809B2
公開日期
2023-12-26
申請人
LG CHEM, LTD.（KR Seoul）
發(fā)明人
Ji Hye Kim; Sung Kil Hong; Minseung Chun; Yeon Hwan Kim; Jae Tak Lee
IPC分類
H10K50/16; H10K71/70; H10K71/00; H10K85/60; H10K50/18; H10K101/50
技術(shù)領(lǐng)域
electron,transport,donating,emitting,material,hole,layer,blocking,organic,light
地域： Seoul

摘要

A method of screening for an electron transport material included in an electron transport layer of an organic light emitting device and a method of screening for a hole blocking material included in a hole blocking layer of the organic light emitting device, the method using a heterogeneous electron transfer rate constant (K) value to select the electron transport material and an electron donating rate constant kd to select the hole blocking material, thereby capable of realizing the organic light emitting device having an excellent balance between luminous efficiency and lifetime.

說明書

  • a2) From the cathodic peak of the C-V curve, a graph where the x-axis is the scan rate (V/s) and the y-axis is the cathodic peak potential (Epc) is plotted. A formal potential (Ec0′) value when x is 0 (the scan rate is 0) is obtained therefrom;
  • b2) Further, from the cathodic peak of the C-V curve, a graph where the x-axis is In(v) and the y-axis is the cathodic peak potential (Epc) is plotted. After fitting the graph to a straight line, the slope and the y-intercept are obtained therefrom;
  • c2) By using the slope and the y-intercept obtained as above, the electron accepting rate constant ka (accepting k) satisfying the following Mathematical equation 2-2 is calculated:

    • E pc = E c 0 ′ + ( RT α ? n ? F ) ? ln ? ( RTk a α ? n ? F ) - ( RT α

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