Method of screening for electron transport material and hole blocking material used in organic light emitting device
地域：
Seoul
摘要
A method of screening for an electron transport material included in an electron transport layer of an organic light emitting device and a method of screening for a hole blocking material included in a hole blocking layer of the organic light emitting device, the method using a heterogeneous electron transfer rate constant (K) value to select the electron transport material and an electron donating rate constant kd to select the hole blocking material, thereby capable of realizing the organic light emitting device having an excellent balance between luminous efficiency and lifetime.
說明書
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- a1) From the anodic peak of the C-V curve obtained in step 1), an anodic peak potential (Epa) value was obtained with respect to each scan rate (V/s) of 0.01, 0.05, 0.1, 0.3, and 0.5, and then shown in the following Table 1. A graph where the x-axis is the scan rate (V/s) and the y-axis is the anodic peak potential (Epa) was plotted, and the graph is shown in
FIG. 4 . After fitting to the Mathematical equation ofFIG. 4 , a, b, and c parameters were obtained. A formal potential (Ea0′) value when x is 0 (the scan rate is 0) was obtained therefrom. The obtained formal potential (Ea0′) was ?1.914 V.
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