As shown in FIG. 39, in the present embodiment, the cooling unit 120 of the power module 110 has the heat exchange part 123 of one stage. FIG. 39 corresponds to FIG. 35. Also in the present embodiment, the refrigerant flows from the housing flow path 711 into the flow path 126 of the power module 110. The semiconductor device 20 is arranged between the heat exchange part 123 and the housing 703, and the capacitor C1 connected in parallel to the semiconductor device 20 is arranged on the side opposite to the semiconductor device 20 with respect to the heat exchange part 123. The power module 110 may not have the drive substrate 160. The other configurations are similar to those of the preceding embodiment (for example, see FIG. 35).
Also in the present embodiment, the semiconductor device 20 and the capacitor C1 are thus arranged in the Z direction. Further, the power modules 110 each having such a configuration are arranged on the outer peripheral surface of the housing 703. Therefore, it is possible to reduce the size of the electric power conversion device 5 in the direction orthogonal to the Z direction while enabling the cooling of the semiconductor device 20.
Further, in the same power module 110, the semiconductor device 20 is arranged closer to the housing 703 than the capacitor C1. Therefore, the semiconductor device 20 can be effectively cooled by the refrigerant flowing through the housing 703.