The semiconductor chip 40 is provided by a semiconductor substrate, such as Si, SiC, or GaN substrate, on which elements are formed. The semiconductor device 20 has one semiconductor chip 40. The semiconductor chip 40 is formed with elements (switching element and diode) constituting one arm as described above. That is, an RC (reverse conducting)-IGBT is formed as the elements. For example, when the semiconductor chip 40 is used for the upper arm 10U, the element formed in the semiconductor chip 40 functions as the switching element Q1 and the diode D1. On the other hand, when the semiconductor chip 40 is used for the lower arm 10L, the element formed in the semiconductor chip 40 functions as the switching element Q2 and the diode D2.
The element has a vertical structure so that the main current flows in the Z direction. Although not illustrated, the element has a gate electrode. The gate electrode has a trench structure. As shown in