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Rotary electric machine unit having rotary electric machine with cooling part and electric power conversion device

專利號(hào)
US11888376B2
公開日期
2024-01-30
申請(qǐng)人
DENSO CORPORATION(JP Kariya)
發(fā)明人
Ryota Tanabe; Yuta Hashimoto; Tomohisa Sano; Tomoyuki Shinkai
IPC分類
H02K5/20; H02K11/33; H02K5/22
技術(shù)領(lǐng)域
terminals,70e,main,in,70c,capacitor,power,direction,housing,cooling
地域: Kariya

摘要

A rotary electric machine unit including a rotary electric machine, and an electric power conversion device having a plurality of power modules. The rotary electric machine includes a stator, a rotor, and a housing. The housing includes a housing flow path through which a refrigerant flows. The power modules of the electric power conversion device and the rotary electric machine are configured to be cooled by the refrigerant.

說明書

The semiconductor chip 40 is provided by a semiconductor substrate, such as Si, SiC, or GaN substrate, on which elements are formed. The semiconductor device 20 has one semiconductor chip 40. The semiconductor chip 40 is formed with elements (switching element and diode) constituting one arm as described above. That is, an RC (reverse conducting)-IGBT is formed as the elements. For example, when the semiconductor chip 40 is used for the upper arm 10U, the element formed in the semiconductor chip 40 functions as the switching element Q1 and the diode D1. On the other hand, when the semiconductor chip 40 is used for the lower arm 10L, the element formed in the semiconductor chip 40 functions as the switching element Q2 and the diode D2.

The element has a vertical structure so that the main current flows in the Z direction. Although not illustrated, the element has a gate electrode. The gate electrode has a trench structure. As shown in FIG. 3, the semiconductor chip 40 has main electrodes on opposite surfaces in the Z direction. Specifically, the semiconductor chip 40 has, as the main electrodes, a collector electrode 41 on one surface and an emitter electrode 42 on a rear surface opposite to the one surface. The collector electrode 41 also serves as a cathode electrode of the diode, and the emitter electrode 42 also serves as an anode electrode of the diode. The collector electrode 41 is formed in an almost entire region on the one surface. The emitter electrode 42 is formed at a part of the rear surface.

權(quán)利要求

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