The example in which the switching element and the diode are integrally formed into the same semiconductor chip 40 has been described. However, the present embodiment is not limited to such a configuration. The switching element and the diode may be formed in separate chips. The example in which the semiconductor device 20 has the terminal members 60 as for a double-sided heat radiation structure has been described. However, the present embodiment is not limited to such a configuration. The semiconductor device 20 may not have the terminal members 60. For example, in place of the terminal members 60, the conductive member 50E may have protrusions protruding toward the emitter electrodes 42. The example in which the heat radiation surfaces 54C and 53E are exposed from the sealing resin body 30 has been described. Alternatively, the heat radiation surfaces 54C and 54E may not expose from the sealing resin body 30. For example, the heat radiation surfaces 54C and 54E may be covered with an insulating member (not shown). The sealing resin body 30 may be formed in a state where the insulating member is attached to the heat radiation surfaces 54C and 54E.
(Power Module)
An example of a power module 110 applicable to the electric power conversion device 5 of the present embodiment will be described. The power module 110 forms the parallel circuit 11 of one set, as described above.