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Power management circuit

專利號(hào)
US11888399B2
公開(kāi)日期
2024-01-30
申請(qǐng)人
ROHM CO., LTD.(JP Kyoto)
發(fā)明人
Kazunori Itou
IPC分類
H02M3/158; H02M1/00; H02M1/08; H02M1/32
技術(shù)領(lǐng)域
transistor,circuit,mode,pin,first,second,blk2,blk1,mh1,feedback
地域: Kyoto

摘要

In a first mode, a first feedback controller generates a first control signal SCTRL1 based on a signal at a first feedback pin, so as to control a first pre-driver. A second feedback controller ¥ generates a second control signal based on a signal at a second feedback pin, so as to control a second pre-driver. In a second mode, the first feedback controller ¥ generates the first control signal based on a signal at the first feedback pin, so as to control the first pre-driver. The second pre-driver drives the second pre-driver based on a third control signal received from a first circuit block.

說(shuō)明書(shū)

Also, the first overcurrent detection circuit may be structured to be capable of comparing a voltage across both ends of the first high-side transistor with a first threshold voltage that corresponds to the first overcurrent threshold value. Also, in the second mode, the first threshold voltage may be scaled. In the second mode, the two high-side transistor are coupled in parallel. In this state, the on resistance of the pair of high-side transistors becomes one-half. The first threshold voltage is scaled according to this change in the on resistance, thereby providing correct overcurrent judgment.

Also, the first overcurrent detection circuit may include: a dummy transistor arranged such that one end thereof is coupled to the first input pin; a current source coupled to the other end of the dummy transistor, and structured to supply a current to the dummy transistor; and a comparator structured to compare a voltage across both ends of the first high-side transistor with a voltage at a connection node that connects the dummy transistor and the current source.

Also, there may be a difference in an amount of current generated by the current source between the first mode and the second mode. This allows the first overcurrent threshold value to be scaled.

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