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Semiconductor device

專利號(hào)
US11888446B2
公開日期
2024-01-30
申請(qǐng)人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.(JP Atsugi)
發(fā)明人
Kiyotaka Kimura; Takeya Hirose; Hidetomo Kobayashi; Takayuki Ikeda
IPC分類
H03D7/14; H03D7/12; H01L27/12; H01L29/786; H10B12/00
技術(shù)領(lǐng)域
insulator,conductor,transistor,oxide,circuit,in,analog,530b,or,530c
地域: Atsugi

摘要

A semiconductor device with a novel structure is provided. The semiconductor device includes a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits. The plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit. The control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit. The power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated. The analog potential holding circuit includes a first transistor. The first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.

說(shuō)明書

FIG. 3B is a circuit diagram applicable to the block diagram of the multiplier circuit 30 shown in FIG. 3A. The multiplier circuit 30 includes a Gilbert circuit 46, which includes a transistor 41_1, a transistor 41_2, a transistor 41_3, a transistor 41_4, a transistor 41_5, a transistor 41_6, a transistor 41_7, a transistor 418, a transistor 42_1, a transistor 42_2, a resistor 43_1, and a resistor 43_2, and the analog potential holding circuits 45N and 45P, which include a transistor 44_1 and a transistor 44_2 connected to gates of the transistors included in the Gilbert circuit. The signals and voltages illustrated in FIG. 3A are supplied to the gates of the transistors shown in FIG. 3B.

In FIG. 3B, the transistor 41_1, the transistor 41_2, the transistor 41_3, the transistor 41_4, the transistor 41_5, the transistor 41_6, the transistor 41_7, and the transistor 41_8 are transistors including silicon in channel formation regions (Si transistors), specifically p-channel Si transistors. The transistor 42_1 and the transistor 42_2 are n-channel Si transistors. Si transistors can be fabricated by a CMOS technology.

權(quán)利要求

1
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